- 您现在的位置：买卖IC网 > PDF目录295865 > E28F200BX-T120 (INTEL CORP) 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY PDF资料下载
参数资料
| 型号： | E28F200BX-T120 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 35/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-T120 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页当前第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页
28F200BX-TB 28F002BX-TB
AC CHARACTERISTICS FOR WE -CONTROLLED WRITE OPERATIONS(1)
(Continued)
Versions
VCC g5%
VCC g 10%
Unit
28F200BX-60(9)
28F200BX-60(10)
28F200BX-80(10)
28F200BX-120(10)
28F002BX-60(9)
28F002BX-60(10)
28F002BX-80(10)
28F002BX-120(10)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tQVPH tPHH RP
VHH Hold
6 8
0
ns
from Valid SRD
tPHBR
Boot-Block
7 8
100
ns
Relock Delay
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
characteristics during Read Mode
2 The on-chip WSM completely automates programerase operations programerase algorithms are now controlled inter-
nally which includes verify and margining operations
3 Refer to command definition table for valid AIN
4 Refer to command definition table for valid DIN
5 ProgramErase durations are measured to valid SRD data (successful operation SR7e1)
6 For Boot Block ProgramErase RP
should be held at VHH until operation completes successfully
7 Time tPHBR is required for successful relocking of the Boot Block
8 Sampled but not 100% tested
9 See High Speed Test Configuration
10 See Standard Test Configuration
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE VPP e 120V g5%
Parameter
Notes
28F200BX-60
28F200BX-80
28F200BX-120
Unit
28F002BX-60
28F002BX-80
28F002BX-120
Min
Typ(1)
Max
Min
Typ(1)
Max
Min
Typ(1)
Max
BootParameter
2
10
7
10
7
10
7
s
Block Erase Time
Main Block
2
24
14
24
14
24
14
s
Erase Time
Main Block Byte
2
12
42
12
42
12
42
s
Program Time
Main Block Word
2
06
21
06
21
06
21
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
BLOCK ERASE AND WORDBYTE WRITE PERFORMANCE VPP e 120V g10%
Parameter
Notes
28F200BX-60
28F200BX-80
28F200BX-120
Unit
28F002BX-60
28F002BX-80
28F002BX-120
Min
Typ(1)
Max
Min
Typ(1)
Max
Min
Typ(1)
Max
BootParameter
2
58
40
58
40
58
40
s
Block Erase Time
Main Block
2
14
60
14
60
14
60
s
Erase Time
Main Block Byte
2
60
20
60
20
60
20
s
Program Time
Main Block Word
2
30
10
30
10
30
10
s
Program Time
NOTES
1 25 C
2 Excludes System-Level Overhead
40
相关PDF资料 |
PDF描述 |
|---|---|
| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
发布紧急采购，3分钟左右您将得到回复。