参数资料
型号: E28F200BX-T120
厂商: INTEL CORP
元件分类: PROM
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 128K X 16 FLASH 12V PROM, 120 ns, PDSO56
封装: 20 X 14 MM, TSOP-56
文件页数: 18/48页
文件大小: 453K
代理商: E28F200BX-T120
28F200BX-TB 28F002BX-TB
290448 – 10
Bus
Command
Comments
Operation
Write
Setup
Data e 20H
Erase
Address e Within block to be
erased
Write
Erase
Data e D0H
Address e Within block to be
erased
Read
Status Register Data
Toggle OE
or CE
to update
Status Register
Standby
Check SR7
1 e Ready 0 e Busy
Repeat for subsequent blocks
Full status check can be done after each block or after a
sequence of blocks
Write FFH after the last block erase operation to reset the
device to Read Array Mode
Full Status Check Procedure
290448 – 11
Bus
Command
Comments
Operation
Standby
Check SR3
1 e VPP Low Detect
Standby
Check SR45
Both 1 e Command Sequence
Error
Standby
Check SR5
1 e Block Erase Error
SR3 MUST be cleared if set during an erase attempt
before further attempts are allowed by the Write State
Machine
SR5 is only cleared by the Clear Status Register
Command in cases where multiple blocks are erased
before full status is checked
If error is detected clear the Status Register before
attempting retry or other error recovery
Figure 14 Automated Block Erase Flowchart
25
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