- 您现在的位置：买卖IC网 > PDF目录295865 > E28F200BX-T120 (INTEL CORP) 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY PDF资料下载
参数资料
| 型号： | E28F200BX-T120 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 120 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 40/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-T120 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页当前第40页第41页第42页第43页第44页第45页第46页第47页第48页
28F200BX-TB 28F002BX-TB
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS FOR CE -CONTROLLED WRITE OPERATIONS(1 9)
Versions
T28F200BX-80(10)
Unit
T28F002BX-80(10)
Symbol
Parameter
Notes
Min
Max
tAVAV
tWC
Write Cycle Time
80
ns
tPHEL
tPS
RP
High Recovery
220
ns
to CE
Going Low
tWLEL
tWS
WE
Setup to CE
0ns
Going Low
tPHHEH
tPHS
RP
VHH Setup to
6 8
100
ns
CE
Going High
tVPEH
tVPS
VPP Setup to CE
5 8
100
ns
Going High
tAVEH
tAS
Address Setup to
3
60
ns
CE
Going High
tDVEH
tDS
Data Setup to CE
460
ns
Going High
tELEH
tCP
CE
Pulse Width
60
ns
tEHDX
tDH
Data Hold from
4
0
ns
CE
High
tEHAX
tAH
Address Hold
3
10
ns
from CE
High
tEHWH
tWH
WE
Hold from CE
High
10
ns
tEHEL
tCPH
CE
Pulse
20
ns
Width High
tEHQV1
Duration of WordByte
2 5
7
m
s
Programming
Operation
tEHQV2
Duration of Erase
2 5 6
04
s
Operation (Boot)
tEHQV3
Duration of Erase
2 5
04
s
Operation (Parameter)
tEHQV4
Duration of Erase
2 5
07
s
Operation (Main)
tQVVL
tVPH
VPP Hold from
5 8
0
ns
Valid SRD
tQVPH
tPHH
RP
VHH Hold
6 8
0
ns
from Valid SRD
tPHBR
Boot-Block Relock Delay
7
100
ns
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Ship-Enable Controlled Writes Write operations are driven by the valid combination of CE
and WE
in systems where
CE
defines the write pulse-width (within a longer WE
timing waveform) all set-up hold and inactive WE
time should
be measured relative to the CE
waveform
2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
10 See Standard Test Configuration
45
相关PDF资料 |
PDF描述 |
|---|---|
| E28F002BX-T120 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200CVB80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
发布紧急采购，3分钟左右您将得到回复。