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参数资料
| 型号： | E28F200BX-B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 60 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 26/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-B60 |
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28F200BX-TB 28F002BX-TB
DC CHARACTERISTICS EXTENDED TEMPERATURE OPERATION (Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
VIL
Input Low Voltage
b
05
08
V
VIH
Input High Voltage
20
VCC a 05 V
VOL
Output Low Voltage
045
V
VCC e VCC Min
IOL e 58 mA
VOH1
Output High Voltage (TTL)
24
V
VCC e VCC Min
IOH eb25 mA
VOH2
Output High Voltage (CMOS)
085 VCC
VVCC e VCC Min
IOH eb25 mA
VCC b 04
VCC e VCC Min
IOH eb100 mA
VPPL
VPP during Normal Operations
3
00
65
V
VPPH
VPP during EraseWrite Operations
7
114
120
126
V
VPPH
VPP during EraseWrite Operations
8
108
120
132
V
VLKO
VCC EraseWrite Lock Voltage
20
V
VHH
RP
Unlock Voltage
115
130
V
Boot Block WriteErase
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 50V VPP e 120V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 ICCES is specified with the device deselected If the device is read while in Erase Suspend Mode current draw is the sum
of ICCES and ICCR
3 Block Erases and WordByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and
VPPL
4 Sampled not 100% tested
5 Automatic Power Savings (APS) reduces ICCR to less than 1 mA typical in static operation
6 CMOS Inputs are either VCC g02V or GND g02V TTL Inputs are either VIL or VIH
7 VPP e 120V g5% for applications requiring 100000 block erase cycles
8 VPP e 120V g10% for applications requiring wider VPP tolerances at 100 block erase cycles
9 For the 28F002BX address pin A10 follows the COUT capacitance numbers
10 ICCR typical is 25 mA for X16 active read current
32
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相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-L150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| E28F200BX-T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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