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参数资料
| 型号： | E28F200BX-B60 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 128K X 16 FLASH 12V PROM, 60 ns, PDSO56 |
| 封装： | 20 X 14 MM, TSOP-56 |
| 文件页数： | 39/48页 |
| 文件大小： | 453K |
| 代理商： | E28F200BX-B60 |
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28F200BX-TB 28F002BX-TB
AC CHARACTERISTICS FOR CE -CONTROLLED WRITE OPERATIONS(1 9)
Versions
VCC g5%
VCC g 10%
Unit
28F200BX-60(10) 28F200BX-60(11) 28F200BX-80(11) 28F200BX-120(11)
28F002BX-60(10) 28F002BX-60(11) 28F002BX-80(11) 28F002BX-120(11)
Symbol
Parameter
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tAVAV tWC Write Cycle Time
60
70
80
120
ns
tPHEL tPS RP
High Recovery
215
ns
to CE
Going Low
tWLEL tWS WE
Setup to CE
000
0
ns
Going Low
tPHHEH tPHS RP
VHH Setup to
6 8
100
ns
CE
Going High
tVPEH tVPS VPP Setup to CE
5 8
100
ns
Going High
tAVEH tAS Address Setup to
3
50
ns
CE
Going High
tDVEH tDS Data Setup to CE
4
606060
60
ns
Going High
tELEH tCP CE
Pulse Width
50
60
ns
tEHDX tDH Data Hold from
4
0
ns
CE
High
tEHAX tAH Address Hold
3
10
ns
from CE
High
tEHWH tWH WE
Hold from
10
ns
CE
High
tEHEL tCPH CE
Pulse
10
20
ns
Width High
tEHQV1
Duration of
2 5
6
m
s
WordByte
Programming
Operation
tEHQV2
Duration of Erase
2 5 6
03
s
Operation (Boot)
tEHQV3
Duration of Erase
2 5
03
s
Operation
(Parameter)
tEHQV4
Duration of Erase
2 5
06
s
Operation (Main)
tQVVL tVPH VPP Hold from
5 8
0
ns
Valid SRD
tQVPH tPHH RP
VHH Hold
6 8
0
ns
from Valid SRD
tPHBR
Boot-Block Relock
7
100
ns
Delay
tIR
Input Rise Time
10
ns
tIF
Input Fall Time
10
ns
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE
and WE
in systems where
CE
defines the write pulse-width (within a longer WE
timing waveform) all set-up hold and inactive WE
time should
be measured relative to the CE
waveform
2 3 4 5 6 7 8 Refer to AC Characteristics notes for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
10 See High Speed Test Configuration
11 See Standard Test Configuration
44
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相关代理商/技术参数 |
参数描述 |
|---|---|
| E28F200BX-B80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-L150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| E28F200BX-T120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F200BX-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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