参数资料
型号: E28F200BX-B60
厂商: INTEL CORP
元件分类: PROM
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 128K X 16 FLASH 12V PROM, 60 ns, PDSO56
封装: 20 X 14 MM, TSOP-56
文件页数: 7/48页
文件大小: 453K
代理商: E28F200BX-B60
28F200BX-TB 28F002BX-TB
3122 28F002BX-T Memory Map
The 28F002BX-T device has the 16-Kbyte boot
block located from 3C000H to 3FFFFH to accom-
modate those microprocessors that boot from the
top of the address map In the 28F002BX-T the first
8-Kbyte parmeter block resides in memory space
from 3A000H to 3BFFFH The second 8-Kbyte pa-
rameter block resides in memory space from
38000H to 39FFFH The 96-Kbyte main block re-
sides in memory space from 20000H to 37FFFH
The 128-Kbyte main block resides in memory space
from 00000H to 1FFFFH
3FFFFH
16-Kbyte BOOT BLOCK
3BFFFH
3C000H
8-Kbyte PARAMETER BLOCK
39FFFH
3A000H
8-Kbyte PARAMETER BLOCK
37FFFH
38000H
96-Kbyte MAIN BLOCK
1FFFFH
20000H
128-Kbyte MAIN BLOCK
00000H
Figure 11 28F002BX-T Memory Map
40 PRODUCT FAMILY PRINCIPLES
OF OPERATION
Flash memory augments EPROM functionality with
in-circuit electrical write and erase The 2-Mbit flash
family utilizes a Command User Interface (CUI) and
internally generated and timed algorithms to simplify
write and erase operations
The CUI allows for 100% TTL-level control inputs
fixed power supplies during erasure and program-
ming and maximum EPROM compatibility
In the absence of high voltage on the VPP pin the
2-Mbit boot block flash family will only successfully
execute the following commands Read Array Read
Status Register Clear Status Register and Intelli-
gent Identifier mode The device provides standard
EPROM read standby and output disable opera-
tions Manufacturer Identification and Device Identi-
fication data can be accessed through the CUI or
through the standard EPROM A9 high voltage ac-
cess (VID) for PROM programming equipment
The same EPROM read standby and output disable
functions are available when high voltage is applied
to the VPP pin In addition high voltage on VPP al-
lows write and erase of the device All functions as-
sociated with altering memory contents write and
erase Intelligent Identifier read and Read Status are
accessed via the CUI
The purpose of the Write State Machine (WSM) is to
completely automate the write and erasure of the
device The WSM will begin operation upon receipt
of a signal from the CUI and will report status back
through a Status Register The CUI will handle the
WE
interface to the data and address latches as
well as system software requests for status while the
WSM is in operation
41 28F200BX Bus Operations
Flash memory reads erases and writes in-system
via the local CPU All bus cycles to or from the flash
memory conform to standard microprocessor bus
cycles
15
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E28F200BX-B80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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E28F200BX-T120 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F200BX-T60 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
E28F200BX-T80 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY