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参数资料
| 型号： | EN29LV640T-90BIP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 13/53页 |
| 文件大小： | 495K |
| 代理商： | EN29LV640T-90BIP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
20
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
Table 6. System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
1Ch
38h
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
P
N
P
S
20h
40h
0000h
Typical timeout for Min, size buffer write 2
P
N
P
S (00h = not
supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
P
N
P
ms
22h
44h
0000h
Typical timeout for full chip erase 2
P
N
P
ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2
P
N
P
times typical
24h
48h
0000h
Max. timeout for buffer write 2
P
N
P
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
P
N
P
times typical
26h
4Ch
0000h
Max timeout for full chip erase 2
P
N
P
times typical (00h = not
supported)
Table 7. Device Geometry Definition
Addresses
(Word mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0017h
Device Size = 2
P
N
P
bytes
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
Max. number of byte in multi-byte write = 2
P
N
P
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Eh
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV640T-90BI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90BP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90B | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TIP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全称:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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