参数资料
型号: EN29LV640T-90BIP
厂商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 31/53页
文件大小: 495K
代理商: EN29LV640T-90BIP
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
37
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
Test Conditions
Test Specifications
Test Conditions
-70
-90
Unit
Output Load
1 TTL Gate
Output Load Capacitance, C
B
LB
30
100
pF
Input Rise and Fall times
5
ns
Input Pulse Levels
0.0-3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Device under Test
CL
6.2 k
Ω
2.7 k
Ω
3.3 V
Note: Diodes are IN3064 or equivalent
相关PDF资料
PDF描述
EN29LV640T-90BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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