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参数资料
| 型号： | EN29LV640T-90BIP |
| 厂商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 64兆位（8米× 8位/分x 16位）闪存引导扇区闪存，CMOS 3.0伏，只 |
| 文件页数： | 16/53页 |
| 文件大小： | 495K |
| 代理商： | EN29LV640T-90BIP |
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This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
23
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
COMMAND DEFINITIONS
The operations of the device are selected by one or more commands written into the command
register. Commands are made up of data sequences written at specific addresses via the
command register. The sequences for the specified operation are defined in the Command
Definitions table (Table 9). Incorrect addresses, incorrect data values or improper sequences will
reset the device to Read Mode.
Table 9. EN29LV640T/B Command Definitions
Bus Cycles
1
P
st
P
Cycle
2
P
nd
P
Cycle
3
P
rd
P
Cycle
4
P
th
P
Cycle
5
P
th
P
Cycle
6
P
th
P
Cycle
Command
Sequence
Cycles
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
1
RA
RD
Reset
1
xxx
F0
000
7F
Word
555
2AA
555
100
1C
000
7F
Manufacturer ID
Byte
4
AAA
AA
555
55
AAA
90
200
1C
Word
555
2AA
555
x01
22C9
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
C9
Word
555
2AA
555
x01
22CB
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
x02
CB
00
Word
555
2AA
555
(SA)
X02
01
00
Autose
lect
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
(SA)
X04
01
Word
555
2AA
555
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
555
Unlock Bypass
Byte
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
XXX
A0
PA
PD
Unlock Bypass Reset
2
XXX
90
XXX
00
Word
555
2AA
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Sector Erase Suspend
1
xxx
B0
Sector Erase Resume
1
xxx
30
Word
55
CFI Query
Byte
1
AA
98
Address and Data values indicated are in hex. Unless specified, all bus cycles are write cycles
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A20-A12 uniquely select any Sector.
Notes:
1. The data is 00H for an unprotected sector/sector block and 01H for a protected sector/sector block.
2. The data is 88H for factory locked and 08H for not factory locked.
相关PDF资料 |
PDF描述 |
|---|---|
| EN29LV640T-90BI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90BP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90B | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TIP | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV640T-90TI | 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全称:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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