参数资料
型号: EN29LV640T-90BIP
厂商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 37/53页
文件大小: 495K
代理商: EN29LV640T-90BIP
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
42
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
AC CHARACTERISTICS
Table 14. Write (Erase/Program) Operations
Alternate
CE# Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
-70
-90
Unit
t
B
AVAVB
t
B
WCB
Write Cycle Time
Min
70
90
ns
t
B
AVELB
t
B
ASB
Address Setup Time
Min
0
ns
t
B
ELAXB
t
B
AHB
Address Hold Time
Min
45
40
ns
t
B
DVEHB
t
B
DSB
Data Setup Time
Min
30
40
ns
t
B
EHDXB
t
B
DHB
Data Hold Time
Min
0
ns
t
B
OESB
Output Enable Setup Time
Min
0
ns
t
B
GHELB
t
B
GHELB
Read Recovery Time before
Write (OE# High to CE# Low)
Min
0
ns
t
B
WLELB
t
B
WSB
WE# Setup Time
Min
0
ns
t
B
EHWHB
t
B
WHB
WE# Hold Time
Min
0
ns
t
B
ELEHB
t
B
CPB
CE# Pulse Width
Min
35
45
ns
t
B
EHELB
t
B
CPHB
CE# Pulse Width High
Min
20
ns
Byte
Typ
8
t
B
WHW1B
t
B
WHWH1B
Programming
Operation
Word
Typ
8
s
t
B
WHW1B
t
B
WHWH1B
Accelerated Programming
Operation
(Word AND Byte Mode)
Typ
7
5
s
t
B
WHW2B
t
B
WHWH2B
Sector Erase Operation
Typ
0.5
s
相关PDF资料
PDF描述
EN29LV640T-90BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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