参数资料
型号: EN29LV640T-90BIP
厂商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 34/53页
文件大小: 495K
代理商: EN29LV640T-90BIP
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
4
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
ORDERING INFORMATION
EN29LV640
T
70
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 6mm x 8mm package
SPEED
70 = 70ns
90 = 90ns
BOOT CODE SECTOR ARCHITECTURE
T = Top boot Sector
B = Bottom boot Sector
BASE PART NUMBER
EN = EON Silicon Solution Inc.
29LV = FLASH, 3V Read, Program and Erase
640 = 64 Megabit (8M x 8 / 4M x 16)
相关PDF资料
PDF描述
EN29LV640T-90BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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