参数资料
型号: EN29LV640T-90BIP
厂商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 64兆位(8米× 8位/分x 16位)闪存引导扇区闪存,CMOS 3.0伏,只
文件页数: 27/53页
文件大小: 495K
代理商: EN29LV640T-90BIP
This Data Sheet may be revised by subsequent versions
2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
33
EN29LV640T/B
Rev. B, Issue Date: 2007/05/16
Flowchart 7a. In-System Sector (Group) Protect Flowchart
START
PLSCNT = 1
RESET# = VID
Wait 1
μs
First Write
Cycle =
60h?
No
Temporary Chip
Unprotect Mode
Yes
Set up sector
(group) address
To Protect: Write 60h to
sector addr with
A6 = 0, A1 = 1, A0 = 0
Wait 150
μs
To Verify: Write 40h to
sector(group) address
with
A6 = 0, A1 = 1, A0 = 0
Read from sector
address with
A6 = 0, A1 = 1, A0
Data = 01h?
No
PLSCNT = 25?
Increment
PLSCNT
No
Device failed
Yes
Protect another
sector?
Yes
Reset
PLSCNT = 1
No
Remove VID
from RESET#
Write reset
command
Sector Protect
complete
Sector Protect Algorithm
Yes
Wait 0.4
μs
相关PDF资料
PDF描述
EN29LV640T-90BI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90BP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TIP 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV640T-90TI 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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