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| 型号： | FDS2572 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 4.9A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 47 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2050pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | FDS2572DKR |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
150
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 120V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 4.9A, V GS = 10V
I D = 4.9A, V GS = 6V
2
-
-
-
0.040
0.044
4
0.047
0.053
V
?
?
Dynamic Characteristics
C ISS
C OSS
C RSS
R g
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
0.1
-
2050
220
48
1.3
29
2870
310
80
3.0
38
pF
pF
pF
?
nC
Q g(TH)
Q gs
Q gd
Q gs2
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Charge Threshold to Plateau
V GS = 0V to 2V
V DD = 75V
I D = 4.9A
I g = 1.0mA
-
-
-
-
4
8
6
4
6
-
-
-
nC
nC
nC
nC
Switching Characteristics
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
14
27
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 75V, I D = 4.9A
V GS = 10V, R G = 10 ?
-
-
-
-
4
44
22
-
-
-
-
100
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 4.9A
I SD = 3.1A
I SD = 4.9A, dI SD /dt =100A/ μ s
I SD = 4.9, dI SD /dt =100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
72
158
V
V
ns
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user’s board design.
2. R θ JA is measured with 1.0in 2 copper on FR-4 board
?2001 Fairchild Semiconductor Corporation
FDS2572 Rev. C, July 2013
相关PDF资料 |
PDF描述 |
|---|---|
| FDS2582 | MOSFET N-CH 150V 4.1A 8SOIC |
| FDS2670 | MOSFET N-CH 200V 3A SO-8 |
| FDS2672_F085 | MOSFET N-CH 200V 3.9A 8-SOIC |
| FDS2672 | MOSFET N-CH 200V 3.9A 8-SOIC |
| FDS2734 | MOSFET N-CH 250V 3A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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