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| 型号： | HYB18T1G160C2F-3.7 |
| 厂商： | QIMONDA AG |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.5 ns, PBGA84 |
| 封装： | GREEN, PLASTIC, TFBGA-84 |
| 文件页数： | 21/70页 |
| 文件大小： | 3996K |
| 代理商： | HYB18T1G160C2F-3.7 |
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HY[B/I]18T1G[40/80/16]0C2[C/F](L)
1-Gbit Double-Data-Rate-Two SDRAM
Internet Data Sheet
Rev. 1.60, 2008-08
28
09262007-3YK7-BKKG
5
Electrical Characteristics
This chapter describes the electrical characteristics.
5.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 19 at any time.
TABLE 19
Absolute Maximum Ratings
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 20
DRAM Component Operating Temperature Range
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
V
DD
Voltage on
V
DD pin relative to VSS
–1.0
+2.3
V
1)
1) When
V
DD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
V
DDQ
Voltage on
V
DDQ pin relative to VSS
–0.5
+2.3
V
V
DDL
Voltage on
V
DDL pin relative to VSS
–0.5
+2.3
V
V
IN, VOUT
Voltage on any pin relative to
V
SS
–0.5
+2.3
V
T
STG
Storage Temperature
–55
+100
°C
1)2)
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
T
OPER
Operating Temperature
0
+95
°C
1)2)3)4)5) Standard
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported.
3) During operation, the DRAM case temperature must be maintained between 0 - 95 °C for HYB... products under all other specification
parameters.
4) Above 85
°C the Auto-Refresh command interval has to be reduced to t
REFI= 3.9 μs.
5) When operating this product in the 85 °C to 95 °C
T
CASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to 1. When the High Temperature Self Refresh is enabled there is an increase of
I
DD6 by approximately 50%.
-40
+95
°C
1)2)4)5)6) Industrial
6) During operation, the DRAM case temperature must be maintained between -40 - +95 for HYI... products under all other specification
parameters.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HYB18T1G400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA |
| HYB18T1G400AF-5 | 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68 |
| HYB18T1G800BF-3S | 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:60 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 线串行 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-PDIP 包装:管件 产品目录页面:1449 (CN2011-ZH PDF) |
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
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