参数资料
型号: HYS72T128000EU-2.5-C2
厂商: QIMONDA AG
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
封装: GREEN, UDIMM-240
文件页数: 23/59页
文件大小: 3071K
代理商: HYS72T128000EU-2.5-C2
HYS[64/72]T[128/256]0x0EU–[19F/1.9/25F/2.5/3S]–C2
Unbuffered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.00, 2008-06
3
12032007-I9KE-FFWO
1
Overview
This chapter gives an overview of the 240-pin Unbuffered DDR2 SDRAM modules product family and describes its main
characteristics.
1.1
Features
240-Pin PC2-8500, PC2-6400 and PC2-5300 DDR2
SDRAM memory modules.
One rank 128M
× 64, 128M × 72, and two rank 256M × 64,
256M
× 72 module organization, and 128M × 8 chip
organization.
2GB, 1GB Modules built with 1 Gbit DDR2 SDRAMs in
chipsize packages PG-TFBGA-60.
Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply.
All speed grades faster than DDR2-400 comply with
DDR2-400 timing specifications.
Programmable CAS Latencies (3, 4, 5, 6, 7 and 8 ), Burst
Length (8 & 4).
Auto Refresh (CBR) and Self Refresh.
Auto Refresh for temperatures above 85 °C
t
REFI = 3.9 μs.
Programmable self refresh rate via EMRS2 setting.
Programmable partial array refresh via EMRS2 settings.
DCC enabling via EMRS2 setting.
All inputs and outputs SSTL_1.8 compatible.
Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT).
Serial Presence Detect with E
2PROM.
UDIMM and EDIMM Dimensions (nominal): 30 mm high,
133.35 mm wide
Based on standard reference layouts Raw Cards 'D', 'E', 'F'
and 'G'.
RoHS compliant products
1).
TABLE 1
Performance Table
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. For more information please visit
www.qimonda.com/green_products .
QAG Speed Code
–19F
–1.9
–25F
–2.5
–3S
Unit
Note
DRAM Speed Grade
DDR2
–1066E
–1066F
–800D
–800E
–667D
Module Speed Grade
PC2
–8500E
–8500F
–6400D
–6400E
–5300D
CAS-RCD-RP latencies
6–6–6
7–7–7
5–5–5
6–6–6
5–5–5
t
CK
Max. Clock Frequency
CL3
f
CK3
200
MHz
CL4
f
CK4
333
266
MHz
CL5
f
CK5
400
333
400
333
MHz
CL6
f
CK6
533
400
400
MHz
CL7
f
CK7
533
–––MHz
Min. RAS-CAS-Delay
t
RCD
11.25
13.125
12.5
15
ns
Min. Row Precharge Time
t
RP
11.25
13.125
12.5
15
ns
Min. Row Active Time
t
RAS
45
ns
相关PDF资料
PDF描述
HYS72T64000EP-3.7-B2 64M X 72 DDR DRAM MODULE, DMA240
HZ20-1 19.25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ6B1L 5.65 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ9.1CP 9.65 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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