参数资料
型号: HYS72T128000EU-2.5-C2
厂商: QIMONDA AG
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
封装: GREEN, UDIMM-240
文件页数: 8/59页
文件大小: 3071K
代理商: HYS72T128000EU-2.5-C2
HYS[64/72]T[128/256]0x0EU–[19F/1.9/25F/2.5/3S]–C2
Unbuffered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.00, 2008-06
16
12032007-I9KE-FFWO
TABLE 10
DRAM Component Operating Temperature Range
3.2
Operating Conditions
TABLE 11
Supply Voltage Levels and AC / DC Operating Conditions
Symbol
Parameter
Rating
Unit
Note
Min.
Max.
T
CASE
Operating Temperature
0
95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85
°C the Auto-Refresh command interval has to be reduced to t
REFI= 3.9 μs
4) When operating this product in the 85 °C to 95 °C T
CASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
I
DD6 by approximately 50%
Parameter
Symbol
Values
Unit
Note
Min.
Typ.
Max.
Device Supply Voltage
V
DD
1.7
1.8
1.9
V
Output Supply Voltage
V
DDQ
1.7
1.8
1.9
V
1)
1) Under all conditions,
V
DDQ must be less than or equal to VDD
Input Reference Voltage
V
REF
0.49
× V
DDQ
0.5
× V
DDQ
0.51
× V
DDQ
V
2)
2) Peak to peak AC noise on
V
REF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ.
SPD Supply Voltage
V
DDSPD
1.7
3.6
V
DC Input Logic High
V
IH(DC)
V
REF +0.125
V
DDQ +0.3
V
DC Input Logic Low
V
IL (DC)– 0.30
V
REF –0.125
V
AC Input Logic High
V
IH(AC)
V
REF +0.200
V
DDQ +VPEAK
V
AC Input Logic Low
V
IL (AC)
V
SSQ –VPEAK
V
REF –0.200
V
In / Output Leakage Current
I
L
– 5
5
μA
3)
3) Input voltage for any connector pin under test of 0 V
V
IN VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
相关PDF资料
PDF描述
HYS72T64000EP-3.7-B2 64M X 72 DDR DRAM MODULE, DMA240
HZ20-1 19.25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ6B1L 5.65 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ9.1CP 9.65 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
HZB6.8MWA 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相关代理商/技术参数
参数描述
HYS72T128000GR 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000GR-37-A 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000GR-5-A 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000HP 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules
HYS72T128000HP-2.5-B 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules