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参数资料
| 型号： | IDT75T43100S66BS |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | SPECIALTY MICROPROCESSOR CIRCUIT, PBGA304 |
| 封装： | 31 X 31 MM, LOW PROFILE, THERMALLY ENHANCED, SBGA-304 |
| 文件页数： | 27/46页 |
| 文件大小： | 446K |
| 代理商： | IDT75T43100S66BS |
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6.42
33
IDT75T43100
Preliminary Information
IP Co-Processor 32K Entries
Commercial Temperature Ranges
SRAM Write (ZBT)
Sequence Diagrams
NOTES:
1
.
CCLK
is
an
internal
signal
not
seen
by
the
user.
2
.
The
next
command
can
be
initiated
during
the
cycle
t
6.
Two
dead
cycles
are
inserted
because
a)
write
commands
require
one
dead
cycle
before
the
next
instruction
initiates,
and
b)
the
second
cycles
insures
that
no
contention
occurs
on
the
SRAM
Data
Bus.
If
the
next
command
is
an
IPC
Read
,IPC
Write
or
SRAM
Write,
it
can
be
initiated
on
the
cycle
t
4.
3
.
The
Index
Bus
is
driven,
but
to
an
indeterminate
state.
3
.
The
Index
Bus
is
driven,
but
to
an
indeterminate
state.
4
.
For
ZBT,
the
OE
is
tied
LOW,
and
the
CE
input
is
driven
by
the
IPC
CE
/OE
output.
CL
K2
X
CC
L
K
(1
)
CMD
[3:
0]
RE
QDA
T
A
IN
D
E
X
SR
A
M
W
R
IT
E
D
AT
A
IND
X
C
E
(4
)
W
E
HI
T
A
C
K
VA
L
ID
,
I5
32
5
d
rw
06
RDA
C
K
W
R
IT
E
A
DDR
E
S
N
E
X
T
CO
M
A
N
D,
AD
D
R
ES
S
O
R
D
A
T
A
t 1
t 2
t 3
t 4
t 5
t 6
t 7
t 8
t 0
t 9
M
A
T
CHOUT
RE
QS
T
B
CM
D[6:4]
t 10
t 11
t 12
t 13
t 14
t 15
t 16
No
te
2
SR
A
M
D
A
T
A
(S
RAM
W
R
IT
E
)
SR
AM
W
R
IT
E
CO
M
A
N
D
N
EXT
C
O
M
A
N
D
NO
T
E
3
NO
T
E
3
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