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参数资料
| 型号： | IRF5803D2PBF |
| 厂商： | International Rectifier |
| 英文描述： | FETKY ㈢MOSFET & Schottky Diode |
| 中文描述： | FETKY㈢MOSFET的 |
| 文件页数： | 2/11页 |
| 文件大小： | 154K |
| 代理商： | IRF5803D2PBF |
2
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Parameter
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
27
–––
34
Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
-2.0
-27
-1.2
40
50
V
ns
nC
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
di/dt = 100A/μs
MOSFET Source-Drain Ratings and Characteristics
Parameter
Max. Units
3.0
Conditions
If (av)
Max. Average Forward Current
50% Duty Cycle. Rectangular Waveform, T
A
=30°C
See Fig.21
5μs sine or 3μs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
SM
Max. peak one cycle Non-repetitive
Surge current
340
70
Following any rated
with Vrrm applied
Parameter
Max. Units
0.51
0.63
0.44
0.59
40
3.0
37
405
Conditions
Vfm
Max. Forward Voltage Drop
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Vrrm
Irm
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
mA Vr = 40V
Tj = 25°C
Tj = 125°C
Schottky Diode Electrical Specifications
Parameter
Min. Typ. Max. Units
-40
–––
–––
-0.03
–––
–––
–––
–––
-1.0
–––
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25
–––
4.5
–––
3.5
–––
43
–––
550
–––
88
–––
50
–––
1110
–––
93
–––
73
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
112
190
-3.0
–––
-10
-25
-100
100
37
6.8
5.3
65
825
130
75
–––
–––
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.4A
V
GS
= -4.5V, I
D
= -2.7A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -3.4A
V
DS
= -32V, V
GS
= 0V
V
DS
= -32V, V
GS
= 0V, T
J
= 70°C
V
GS
= -20V
V
GS
= 20V
I
D
= -3.4A
V
DS
= -20V
V
GS
= -10V, See Fig. 6 & 14
V
DD
= -20V
I
D
= -1.0A
R
G
= 6.0
V
GS
= -10V,
V
GS
= 0V
V
DS
= -25V
= 100kHz, See Fig. 5
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Ct
Max. Junction Capacitance
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
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