参数资料
型号: IRF7807D1TR
厂商: International Rectifier
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH 30V 8.3A 8-SOIC
标准包装: 4,000
系列: FETKY™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 7A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 5V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
IRF7807D1
Electrical Characteristics
Parameter
Drain-to-Source
V (BR)DSS
Min
30
Typ
Max
Units
V
Conditions
V GS = 0V, I D = 250μA
Breakdown Voltage*
Static Drain-Source
R DS (on)
17
25
m ?
V GS = 4.5V, I D = 7A ?
on Resistance*
Gate Threshold Voltage* V GS (th)
1.0
V
V DS = V GS ,I D = 250μA
Drain-Source Leakage
Current*
I DSS
90
7.2
μ A
mA
V DS = 24V, V GS = 0V
V DS = 24V, V GS = 0V,
T j = 125°C
Gate-Source Leakage
I GSS
+/- 100
nA
V GS = +/-12V
Current*
Total Gate Charge
Q gsync
10.5
14
V DS <100mV,
Synch FET*
V GS = 5V, I D = 7A
Total Gate Charge
Q gcont
12
17
V DS = 16V,
Control FET*
V GS = 5V, I D = 7A
Pre-Vth
Q gs1
2.1
V DS = 16V, I D = 7A
Gate-Source Charge
Post-Vth
Q gs2
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Q gd
2.9
Switch Charge*
Q SW
3.66
5.2
(Q gs2 + Q gd )
Output Charge*
Gate Resistance
Q oss
R g
15.3
1.2
18.4
?
V DS = 16V, V GS = 0
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
V SD
Min
Typ
Max
0.5
Units Conditions
V T j = 25°C, I s = 1A, V GS =0V ?
0.39
T j = 125°C, I s = 1A, V GS =0V ?
Reverse Recovery Time
trr
51
ns T j = 25°C, I s = 7.0A, V DS = 16V
Reverse Recovery Charge
Qrr
48
nC
di/dt = 100A/μs
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
?
?
?
?
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
2
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