参数资料
型号: ISPPAC-POWR1208-01TN44I
厂商: Lattice Semiconductor Corporation
文件页数: 6/35页
文件大小: 0K
描述: IC ISP POWER MGR ANLG/LOG 44TQFP
标准包装: 160
系列: ispPAC®
应用: 电源监控器,序列发生器
输入电压: 0 V ~ 6 V
电源电压: 2.7 V ~ 5.5 V
电流 - 电源: 10mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 44-LQFP
供应商设备封装: 44-TQFP(10x10)
包装: 托盘
Lattice Semiconductor
Recommended Operating Conditions
ispPAC-POWR1208 Data Sheet
Symbol
V DD
Parameter
Core supply voltage at pin
Conditions
Min.
2.25
Max.
5.5
Units
V
During E cell programming
V DDPROG
2
V DDINP
1
Core supply voltage at pin
Digital input supply voltage for IN1-IN4
2
3.0
2.25
5.5
5.5
V
V
V IN 3
V MON
Erase/Program
Cycles
T APROG
Input voltage digital inputs
Voltage monitor inputs V MON1 - V MON12
Ambient temperature during
programming
EEPROM, programmed at
V DD = 3.0V to 5.5V
-40°C to +85°C
0
0
1000
-40
5.5
6.0
+85
V
V
Cycles
°C
T A
Ambient temperature
Power applied - Industrial
Power applied - Automotive
-40
-40
+85
+125
°C
°C
1. The ispPAC-POWR1208 device must be powered from 3.0V to 5.5V during programming of the E 2 CMOS memory.
2. V DDINP is the supply pin that controls logic inputs IN1-IN4 only. Place 0.1μF capacitor to ground and supply the V DDINP pin with appropriate
supply voltage for the given input logic range.
3. Digital inputs are tolerant up to 5.5V, independent of the V DDINP voltage.
Analog Speci?cations
Over Recommended Operating Conditions
I DD
Symbol
Parameter
Supply Current
Conditions
Internal Clock = 250kHz
Min.
Typ.
7
Max.
15
Units
mA
Reference
Symbol
V REF 1
Parameter
Reference voltage at CREF pin
Conditions
T = 25°C
Min.
Typ.
1.17
Max.
Units
V
1. CREF pin requires a 0.1μF capacitor to ground.
Voltage Monitors
Symbol
R IN
V MON Range
V MON Accuracy
V MON Tempco 1
Parameter
Input impedance
Programmable voltage monitor trip
point (192 steps)
Absolute accuracy of any trip point
Temperature drift of any trip point
Conditions
T = 25 °C,
V DD = 3.3V
-40°C to +85°C
Min.
70
1.03
-0.9
Typ.
100
50
Max.
130
5.72
+0.9
Units
k Ω
V
%
ppm/ °C
-40°C to +125°C
76
ppm/ °C
HYST
PSR
Hysteresis of V MON input,
V HYST = HYST*V MON (+/-3 to +/-13mV)
Trip point sensitivity to V DD
V DD = 3.3V
V DD = 3.3V
+/- 0.3% of
trip point
setting
0.06
%
%/V
1. See typical performance curves.
1-5
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