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参数资料
| 型号： | M470T6464EHS-CE6 |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM MODULE, ZMA200 |
| 封装： | ROHS COMPLIANT, SODIMM-200 |
| 文件页数： | 10/22页 |
| 文件大小： | 401K |
| 代理商： | M470T6464EHS-CE6 |
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
18 of 22
Parameter
Symbol
DDR2-800
DDR2-667
Units
Notes
min
max
min
max
Four Activate Window for 1KB page size products
tFAW
35
x
37.5
x
ns
32
Four Activate Window for 2KB page size products
tFAW
45
x
50
x
ns
32
CAS to CAS command delay
tCCD
2
x
2
x
nCK
Write recovery time
tWR
15
x
15
x
ns
32
Auto precharge write recovery + precharge time
tDAL
WR + tnRP
x
WR + tnRP
x
nCK
33
Internal write to read command delay
tWTR
7.5
x7.5
x
ns
24,32
Internal read to precharge command delay
tRTP
7.5
x7.5
x
ns
3,32
Exit self refresh to a non-read command
tXSNR
tRFC + 10
x
tRFC + 10
x
ns
32
Exit self refresh to a read command
tXSRD
200
x
200
x
nCK
Exit precharge power down to any command
tXP
2
x
2
x
nCK
Exit active power down to read command
tXARD
2
x
2
x
nCK
1
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
x
7 - AL
x
nCK
1,2
CKE minimum pulse width (HIGH and LOW pulse width)
tCKE
3
x
3
x
nCK
27
ODT turn-on delay
tAOND
2
nCK
16
ODT turn-on
tAON
tAC(min)
tAC(max)+0.7
tAC(min)
tAC(max)+0.7
ns
6,16,40
ODT turn-on (Power-Down mode)
tAONPD
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
ns
ODT turn-off delay
tAOFD
2.5
nCK
17,45
ODT turn-off
tAOF
tAC(min)
tAC(max)+0.6
tAC(min)
tAC(max)+0.6
ns
17,43,45
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
ns
ODT to power down entry latency
tANPD
3
x3
x
nCK
ODT power down exit latency
tAXPD
8
x8
x
nCK
OCD drive mode output delay
tOIT
0
12
0
12
ns
32
Minimum time clocks remains ON after CKE asynchronously
drops LOW
tDelay
tIS+tCK(avg)
+tIH
x
tIS+tCK(avg)
+tIH
xns
15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6464QZH3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M470T6554BG0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BG3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
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