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参数资料
| 型号： | M470T6464EHS-CE6 |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM MODULE, ZMA200 |
| 封装： | ROHS COMPLIANT, SODIMM-200 |
| 文件页数： | 3/22页 |
| 文件大小： | 401K |
| 代理商： | M470T6464EHS-CE6 |
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
11 of 22
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal
to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
5. SODIMMs that include an optional temperature sensor may require a restricted VDDSPD operating voltage range for proper operation of the temperature
sensor. Refer to the thermal sensor specification for details regarding the supported voltage range. All other functions of the SODIMM SPD are supported
across the full VDDSPD range.
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
Symbol
Parameter
Rating
Units
Notes
Min.
Max.
VDDSPD
Core Supply Voltage
1.7
3.6
V
5
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT
Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
9.0 AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL - 1.8)
8.0 Absolute Maximum DC Ratings
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相关代理商/技术参数 |
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| M470T6464QZH3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M470T6554BG0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BG3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
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