参数资料
型号: M470T6464EHS-CE6
元件分类: DRAM
英文描述: DDR DRAM MODULE, ZMA200
封装: ROHS COMPLIANT, SODIMM-200
文件页数: 6/22页
文件大小: 401K
代理商: M470T6464EHS-CE6
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
14 of 22
11.2 M470T2864EH3 : 128Mx64 1GB Module
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
Units
Notes
CE7
LE7
CF7
LF7
CE6
LE6
IDD0
320
308
mA
IDD1
344
328
mA
IDD2P
80408040
80
40
mA
IDD2Q
184
mA
IDD2N
224
216
mA
IDD3P-F
208
200
mA
IDD3P-S
120
mA
IDD3N
260
248
mA
IDD4W
400
368
mA
IDD4R
472
428
mA
IDD5
592
568
mA
IDD6
80
40
80
40
80
40
mA
IDD7
792
728
mA
11.0 Operating Current Table :
11.1 M470T5663EH3 : 256Mx64 2GB Module
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
Units
Notes
CE7
LE7
CF7
LF7
CE6
LE6
IDD0
776
720
mA
IDD1
856
800
mA
IDD2P
160
80
160
80
160
80
mA
IDD2Q
400
mA
IDD2N
512
480
mA
IDD3P-F
448
432
mA
IDD3P-S
240
mA
IDD3N
576
536
mA
IDD4W
1,016
960
mA
IDD4R
1,256
1,160
mA
IDD5
1,072
1,120
mA
IDD6
160
80
160
80
160
128
mA
IDD7
1,856
1,720
mA
相关PDF资料
PDF描述
M470T6464EHS-LF7 DDR DRAM MODULE, ZMA200
M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM
M48T12 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
M48T12-150PC1 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
M48T12-200PC1 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
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