参数资料
型号: M470T6464EHS-CE6
元件分类: DRAM
英文描述: DDR DRAM MODULE, ZMA200
封装: ROHS COMPLIANT, SODIMM-200
文件页数: 7/22页
文件大小: 401K
代理商: M470T6464EHS-CE6
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
15 of 22
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
Units
Notes
CE7
LE7
CF7
LF7
CE6
LE6
IDD0
520
480
mA
IDD1
600
560
mA
IDD2P
804080408040
mA
IDD2Q
200
mA
IDD2N
256
240
mA
IDD3P-F
224
216
mA
IDD3P-S
120
mA
IDD3N
320
296
mA
IDD4W
760
720
mA
IDD4R
1,000
920
mA
IDD5
816
880
mA
IDD6
80
40
80
40
80
64
mA
IDD7
1,600
1,480
mA
11.4 M470T6464EHS: 64Mx64 512MB Module
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
Units
Notes
CE7
LE7
CF7
LF7
CE6
LE6
IDD0
208
200
mA
IDD1
232
220
mA
IDD2P
402040204020
mA
IDD2Q
929292
mA
IDD2N
112
108
mA
IDD3P-F
104
100
mA
IDD3P-S
606060
mA
IDD3N
148
140
mA
IDD4W
288
260
mA
IDD4R
360
320
mA
IDD5
480
460
mA
IDD6
40
20
40
20
40
20
mA
IDD7
680
620
mA
11.3 M470T2863EH3: 128Mx64 1GB Module
相关PDF资料
PDF描述
M470T6464EHS-LF7 DDR DRAM MODULE, ZMA200
M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM
M48T12 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
M48T12-150PC1 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
M48T12-200PC1 16 Kbit 2Kb x8 TIMEKEEPER[ SRAM
相关代理商/技术参数
参数描述
M470T6464QZH3 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory
M470T6554BG0-CD5/CC 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BG3-CD5/CC 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BGZ0-CD5/CC 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
M470T6554BGZ3-CD5/CC 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC