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参数资料
| 型号： | M470T6464EHS-CE6 |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM MODULE, ZMA200 |
| 封装： | ROHS COMPLIANT, SODIMM-200 |
| 文件页数： | 8/22页 |
| 文件大小： | 401K |
| 代理商： | M470T6464EHS-CE6 |
Rev. 1.0 August 2008
SODIMM
DDR2 SDRAM
16 of 22
(VDD=1.8V, VDDQ=1.8V, TA=25oC)
* DM is internally loaded to match DQ and DQS identically.
Parameter
Symbol
Min
Max
Min
Max
Units
Non-ECC
M470T5663EH3
M470T2864EH3
Input capacitance, CK and CK
CCK
-
48
-
32
pF
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
CI
-
42
-
34
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
9
-
9
Non-ECC
Symbol
M470T2863EH3
M470T6464EHS
Units
Input capacitance, CK and CK
CCK
-
32
-
24
pF
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
CI
-
42
-
34
Input/output capacitance, DQ, DM, DQS, DQS
CIO
-
5.5
-
5.5
Parameter
Symbol
256Mb
512Mb
1Gb
2Gb
4Gb
Units
Refresh to active/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
°C ≤ TCASE ≤ 85°C
7.8
s
85
°C < TCASE ≤ 95°C
3.9
s
(0
°C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
Speed
DDR2-800(E7)
DDR2-800(F7)
DDR2-667(E6)
Units
Bin(CL - tRCD - tRP)
5 - 5 - 5
6 - 6- 6
5 - 5 - 5
Parameter
min
max
min
max
min
max
tCK, CL=3
5
8
-
5
8
ns
tCK, CL=4
3.75
8
3.75
8
3.75
8
ns
tCK, CL=5
2.5
8
3
8
3
8
ns
tCK, CL=6
-
2.5
8
-
ns
tRCD
12.5
-
15
-
15
-
ns
tRP
12.5
-
15
-
15
-
ns
tRC
57.5
-
60
-
60
-
ns
tRAS
45
70000
45
70000
45
70000
ns
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
12.0 Input/Output Capacitance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M470T6464QZH3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR2 SDRAM Memory |
| M470T6554BG0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BG3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
| M470T6554BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
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