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参数资料
| 型号： | M58BW016DB90ZA6FT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 |
| 封装： | 10 X 12 MM, 1 MM PITCH, LBGA-80 |
| 文件页数： | 17/63页 |
| 文件大小： | 901K |
| 代理商： | M58BW016DB90ZA6FT |
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the command is issued then a fast erase operation
will be executed, otherwise the operation will use
VDD. If VPP goes below the VPP Lockout Voltage,
VPPLK, during a fast erase the operation aborts,
the Status Register VPP Status bit is set to ‘1’ and
the command must be re-issued.
Typical Erase times are given in Table 10.
and Pseudo Code, for a suggested flowchart on
using the Block Erase command.
Program Command.
The Program command is used to program the
memory array. Two Bus Write operations are re-
quired to issue the command; the first write cycle
sets up the Program command, the second write
cycle latches the address and data to be pro-
grammed in the internal state machine and starts
the Program/Erase Controller. A program opera-
tion can be aborted by writing FFFFFFFFh to any
address after the program set-up command has
been given.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits. During the
Program operation the memory will only accept
the Read Status Register command and the Pro-
gram/Erase Suspend command. All other com-
mands will be ignored.
If Reset/Power-down, RP, falls to VIL during pro-
gramming the operation will be aborted.
The command can be executed using either VDD
(for a normal program operation) or VPP (for a fast
program operation). If VPP is in the VPPH range
when the command is issued then a fast program
operation will be executed, otherwise the opera-
tion will use VDD. If VPP goes below the VPP Lock-
out Voltage, VPPLK, during a fast program the
operation aborts and the Status Register VPP Sta-
tus bit is set to ‘1’. As data integrity cannot be guar-
anteed when the program operation is aborted, the
memory block must be
erased and repro-
grammed.
and Pseudo Code, for a suggested flowchart on
using the Program command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. The com-
mand will only be accepted during a Program or
Erase operation. It can be issued at any time dur-
ing a program or erase operation. The command
is ignored if the device is already in suspend
mode.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (bit 7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (bit 7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (bit 2) or the Erase
Suspend Status bit (bit 6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 10.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Program and the
Program Suspend commands will also be accept-
ed. When a program operation is completed inside
a Block Erase Suspend the Read Memory Array
command must be issued to reset the device in
Read mode, then the Erase Resume command
can be issued to complete the whole sequence.
Only the blocks not being erased may be read or
programmed correctly.
Resume Flowchart and Pseudo Code, and Figure
24, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command.
Resume Flowchart and Pseudo Code, and Figure
24, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Resume command.
Set Burst Configuration Register Command.
The Set Burst Configuration Register command is
used to write a new value to the Burst Configura-
tion Control Register which defines the burst
length, type, X and Y latencies, Synchronous/
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58BW016DB90ZA6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBZA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DT | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DT100T3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
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