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参数资料
| 型号： | M58BW016DB90ZA6FT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 |
| 封装： | 10 X 12 MM, 1 MM PITCH, LBGA-80 |
| 文件页数： | 19/63页 |
| 文件大小： | 901K |
| 代理商： | M58BW016DB90ZA6FT |
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Register bit 4 is set to '1' if there has been a pro-
gram failure.
Programming aborts if VPP drops out of the al-
lowed range or RP goes to VIL.
A Read Memory Array command must be issued
to return the memory to read mode before issuing
any other commands. Once the code has been
changed a device reset or power-down will make
the protection active with the new code.
ed flowcharts for using the Tuning Protection Pro-
gram command.
Table 9. Commands
Note: 1. X Don’t Care; RA Read Address, RD Read Data, ID Device Code, SRD Status Register Data, PA Program Address; PD Program
Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Burst Configuration Register value, TPA = Tuning
Protection Address, TPC = Tuning Protection Code.
2. Cycles 1 and 2 input the first 32 bits of the code, cycles 3 and 4 the second 32 bits of the code.
Command
Cy
c
le
s
Bus Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
Op.
Addr.
Data
Op.
Addr.
Data
Op.
Addr. Data Op.
Addr.
Data
Read Memory Array
≥ 2 Write
X
FFh
Read
RA
RD
Read Electronic Signature
(Manufacturer Code)
≥ 2 Write
X
90h
Read 00000h
20h
Read Electronic Signature
(Device Code)
≥ 2 Write
X
90h
Read 00001h
IDh
Read Electronic Signature
(Burst Configuration
Register)
≥ 2 Write
X
90h
Read 00005h BCRh
Read Status Register
2
Write
X
70h
Read
X
SRDh
Read Query
≥ 2 Write
X
98h
Read
QAh
QDh
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BAh
D0h
Program
2
Write
X
40h
10h
Write
PA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Burst Configuration
Register
2
Write
X
60h
Write
BCRh
03h
Tuning Protection(2)
Program
4
Write
X
48h
Write
TPAh
TPCh Write
X
48h Write TPAh TPCh
Tuning Protection Unlock(2)
4
Write
X
78h
Write
TPAh
TPCh Write
X
78h Write TPAh TPCh
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58BW016DB90ZA6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBZA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DT | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DT100T3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
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