- 您现在的位置：买卖IC网 > PDF目录299436 > M58BW016DB90ZA6FT (STMICROELECTRONICS) 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 PDF资料下载
参数资料
| 型号： | M58BW016DB90ZA6FT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 |
| 封装： | 10 X 12 MM, 1 MM PITCH, LBGA-80 |
| 文件页数： | 56/63页 |
| 文件大小： | 901K |
| 代理商： | M58BW016DB90ZA6FT |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页当前第56页第57页第58页第59页第60页第61页第62页第63页
6/63
SUMMARY DESCRIPTION
The M58BW016B/D is a 16Mbit non-volatile Flash
memory that can be erased electrically at the block
level and programmed in-system on a Double-
Word basis using a 2.7V to 3.6V VDD supply for the
circuit and a VDDQ supply down to 2.4V for the In-
put and Output buffers. Optionally a 12V VPP sup-
ply can be used to provide fast program and erase
for a limited time and number of program/erase cy-
cles.
The devices support Asynchronous (Latch Con-
trolled and Page Read) and Synchronous Bus op-
erations. The Synchronous Burst Read Interface
allows a high data transfer rate controlled by the
Burst Clock, K, signal. It is capable of bursting
fixed or unlimited lengths of data. The burst type,
latency and length are configurable and can be
easily adapted to a large variety of system clock
frequencies and microprocessors. All Writes are
Asynchronous. On power-up the memory defaults
to Read mode with an Asynchronous Bus.
The device has a boot block architecture with an
array of 8 parameter block of 64Kb each and 31
main blocks of 512Kb each. The parameter blocks
can be located at the top of the address space,
M58BW016BT, M58BW016DT or at the bottom,
M58BW016BB, M58BW016DB.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
All blocks are protected during power-up. The
M58BW016B features four different levels of block
protection to avoid unwanted program/erase oper-
ations. The WP pin offers an hardware protection
on two of the parameter blocks and all of the main
blocks. The Program and Erase commands can
be password protected by the Tuning Protection
command. All Program or Erase operations are
blocked when Reset, RP, is held low. The
M58BW016D offers the same protection features
with the exception of the Tuning Block Protection
which is disabled in the factory.
A Reset/Power-down mode is entered when the
RP input is Low. In this mode the power consump-
tion is lower than in the normal standby mode, the
device is write protected and both the Status and
the Burst Configuration Registers are cleared. A
recovery time is required when the RP input goes
High.
The memory is offered in PQFP80 (14 x 20mm)
and LBGA80 (1.0mm pitch) packages and it is
supplied with all the bits erased (set to ’1’).
相关PDF资料 |
PDF描述 |
|---|---|
| M58BW016DB90ZA3FT | 512K X 32 FLASH 3V PROM, 90 ns, PBGA80 |
| M58BW016DB80ZA6F | 512K X 32 FLASH 3V PROM, 80 ns, PBGA80 |
| M58LW032A | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M58BW016DB90ZA6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DBZA | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DT | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DT100T3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
发布紧急采购，3分钟左右您将得到回复。