参数资料
型号: M58BW016DB90ZA6FT
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 512K X 32 FLASH 3V PROM, 90 ns, PBGA80
封装: 10 X 12 MM, 1 MM PITCH, LBGA-80
文件页数: 59/63页
文件大小: 901K
代理商: M58BW016DB90ZA6FT
62/63
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
January-2001
-01
First Issue.
05-Jun-2001
-02
Major rewrite and restructure.
15-Jun-2001
-03
Nd and Ne values changed in PQFP80 Package Mechanical Table
17-Jul-2001
-04
PQFP80 Package Outline Drawing and Mechanical Data Table updated
17-Dec-2001
-05
tLEAD removed from Absolute Maximum Ratings (Table 12)
80, 90 and 100ns Speed classes defined (Tables 16, 17, 18, 19 and 20 clarified
accordingly)
Figures 14, 15, 16 and 17 clarified
Temperature range 3 and 6 added
Tables 13, 14, 15, 21 and CFI Tables 26, 27, 28, 29 clarified
Document status changed from Product Preview to Preliminary Data
17-Jan-2002
-06
DC Characteristics IPP, IPP1 and IDD1 clarified
AC Bus Read Characteristics timing tGHQZ clarified
30-Aug-2002
6.1
Revision numbering modified: a minor revision will be indicated by incrementing the
tenths digit, and a major revision, by incrementing the units digit of the previous
version (e.g. revision version 06 becomes 6.0).
References of VPP pin used for block protection purposes removed. Figure 9
modified.
4-Sep-2002
7.0
Datasheet status changed from Preliminary Data to full Datasheet.
tWLWH parameter modified in Table 19, Asynchronous Write and Latch Controlled
Write AC Characteristics.
13-May-2003
7.1
Revision History moved to end of document. VPP clarified in Program and Block
Erase commands and Status Register, VPP Status bit. VPPLK added to DC
Characteristics Table. Timing TKHQV modified.
16-Oct-2003
7.2
Silicon Version added to Ordering Information Scheme.
相关PDF资料
PDF描述
M58BW016DB90ZA3FT 512K X 32 FLASH 3V PROM, 90 ns, PBGA80
M58BW016DB80ZA6F 512K X 32 FLASH 3V PROM, 80 ns, PBGA80
M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110N6T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相关代理商/技术参数
参数描述
M58BW016DB90ZA6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DBT 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DBZA 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DT 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
M58BW016DT100T3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories