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参数资料
| 型号： | MA28140 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Packet Telecommand Decoder |
| 中文描述： | 包遥控解码器 |
| 文件页数： | 47/72页 |
| 文件大小： | 857K |
| 代理商： | MA28140 |
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MA28140
47/72
8. ELECTRICAL CHARACTERISTICS AND RATINGS
8.1 DC PARAMETERS
Parameter
Min
Max
Units
Supply Voltage
-0.5
7
V
Input Voltage
-0.3
V
DD
+0.3
V
Current Through Any Pin
-20
+20
mA
Operating Temperature
-55
125
°
C
Storage Temperature
-65
150
°
C
Note:
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Table 7: Absolute Maximum Ratings
Parameter
Supply Voltage
CMOS input high voltage
CMOS input low voltage
TTL input high voltage
TTL input low voltage
Output high voltage
Output high voltage
Input Pull-down current
Input Pull-down current
Input Pull-up current
Input Pull-up current
Input leakage current
Output leakage current
Output leakage current
Output Pull-down current
Output Pull-down current
Static Power supply Current
Dynamic Power supply Current
Conditions
-
-
-
-
-
I
OH
= -3.2mA
I
OL
= 5.0mA
V
DD
= 5.5V, V
IN
= V
SS
V
DD
= 5.5V, V
IN
= V
DD
V
DD
= 5.5V, V
IN
= V
SS
V
DD
= 5.5V, V
IN
= V
DD
V
DD
= 5.5V, V
IN
= V
SS
or V
DD
V
DD
= 5.5V, V
OUT
= V
SS
V
DD
= 5.5V, V
OUT
= V
DD
V
DD
= 5.5V, V
IN
= V
SS
V
DD
= 5.5V, V
IN
= V
DD
V
DD
= 5.5V
f = 4MHz, V
DD
= 5.5V
Typ.
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
20
Symbol
V
DD
V
IHC
V
ILC
V
IHT
V
ILT
V
OH
V
OL
I
PDL
I
PDH
I
PUL
I
PUH
I
L
I
OZL
I
OZH
I
OPDL
I
OPDH
I
DD1
I
DD2
Min.
4.5
0.8 V
DD
V
SS
2
-
0.9 V
DD
-
-30
-30
-150
-30
-10
-50
-50
-50
-50
-
-
Units
V
V
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
Max.
5.5
V
DD
0.2 V
DD
-
0.8
-
0.1 V
DD
30
150
30
30
10
50
50
50
150
20
40
Notes: 1. V
DD
= 5V
±
10% over full temperature range.
2. Total dose radiation not exceeding 10
5
Rads(Si).
3. Mil-Std-883, method 5005, subgroups 1, 2, 3.
4. All outputs are suitable for TTL/CMOS drive.
5. Electro-Static Discharge protection is provided for all pins.
6. Internal pull-up or pull-down resistors should not be relied upon for proper operation and/or termination of input levels
under all operating conditions without prior consultation with Dynex Semiconductor.
7. Input and output leakage measurements are guaranteed but not tested at -55
°
C.
T
able 8: DC Characteristics
Parameter
Input Capacitance
Output Capacitance
Conditions
V
I
= 0V
V
I/O
= 0V
Min.
-
-
Typ.
3
5
Max.
5
7
Units
pF
pF
Symbol
C
IN
C
OUT
NOTE 1: T
A
= 25C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Table 9: Capacitance
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