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| 型号： | MAX8550AETI+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 23/29页 |
| 文件大小： | 0K |
| 描述： | IC PWR SUP DDR INTEG 28TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 60 |
| 应用： | 控制器，DDR |
| 输入电压： | 2 V ~ 28 V |
| 输出数： | 2 |
| 输出电压： | 1.8V，2.5V，0.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 管件 |
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Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
used for setting the adjustable current limit as shown in
6) Then R6 can be calculated as:
( ( ) )
? V - V - V ILIM ( 0 V ) × R 4 - ?
( ( )
)
? V ILIM ( NOM ) ? V ILIM ( 0 V ) × R 56
?
?
Figure 7.
The following is a procedure for calculating the value of
R4, R5, and R6:
1) Calculate the voltage, V ILIM(NOM) , required at ILIM
when the output voltage is at nominal:
R 6 =
V OUT × R 4 × R 5 6
? OUT ILIM ( NOM ) ?
? ?
?
V ILIM ( NOM ) = 10 × I LOAD ( MAX ) × ? 1 - ?
R 5 =
? LIR ?
? 2 ?
× R DS ( ON ) Q 2
2) Pick a percentage of foldback, PFB, from 15%
to 40%.
3) Calculate the voltage, V ILIM(0V) , when the output is
shorted (0V):
V ILIM ( 0 V ) = P FB × V ILIM ( NOM )
4) The value for R4 can be calculated as:
7) Then R5 is calculated as:
R6 × R56
R 6 - R 56
Boost-Supply Diode and
Capacitor Selection (Buck)
A low-current Schottky diode, such as the CMDSH-3
from Central Semiconductor, works well for most appli-
cations. Do not use large-power diodes, because high-
er junction capacitance can charge up the voltage at
BST to the LX voltage and this exceeds the absolute
maximum rating of 6V. The boost capacitor should be
R 4 =
2V - V ILIM( 0 V )
10 μ A
0.1μF to 4.7μF, depending on the input and output volt-
ages, external components, and PC board layout. The
boost capacitance should be as large as possible to
R 56 = ?
? 10 μ A ?
5) The parallel combination of R5 and R6, denoted
R56, is calculated as:
? 2 V ?
? - R 4
V OUT
prevent it from charging to excessive voltage, but small
enough to adequately charge during the minimum low-
side MOSFET conduction time, which happens at maxi-
mum operating duty cycle (this occurs at minimum
input voltage). In addition, ensure that the boost capac-
itor does not discharge to below the minimum gate-to-
source voltage required to keep the high-side MOSFET
fully enhanced for lowest on-resistance. This minimum
gate-to-source voltage (V GS(MIN) ) is determined by:
MAX8550A
REF
C REF
R4
R5
V GS ( MIN ) = V DD x
Q G
C BOOST
where V DD is 5V, Q G is the total gate charge of the
ILIM
GND
Figure 7. Foldback Current Limit
R6
high-side MOSFET, and C BOOST is the boost-capacitor
value where C BOOST is C7 in the Typical Applications
Circuit (Figure 8).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX8550AETI+ | 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX8550AETI+T | 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX8550AETI-T | 功能描述:PMIC 解决方案 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8550ETI | 功能描述:PMIC 解决方案 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| MAX8550ETI+ | 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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