参数资料
型号: MAX8550AETI+
厂商: Maxim Integrated Products
文件页数: 3/29页
文件大小: 0K
描述: IC PWR SUP DDR INTEG 28TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 60
应用: 控制器,DDR
输入电压: 2 V ~ 28 V
输出数: 2
输出电压: 1.8V,2.5V,0.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-WFQFN 裸露焊盘
供应商设备封装: 28-TQFN-EP(5x5)
包装: 管件
Integrated DDR Power-Supply Solution for
Desktops, Notebooks, and Graphic Cards
ELECTRICAL CHARACTERISTICS (continued)
(V IN = +15V, V DD = AV DD = V SHDN = STBY = V BST = V ILIM = 5V, V OUT = V REFIN = V VTTI = 2.5V, UVP/OVP = TP0 = FB = SKIP
= GND, PGND1 = PGND2 = LX = GND, TON = OPEN, V VTTS = V VTT , T A = -40°C to +85°C, unless otherwise noted. Typical values
are at T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
REFERENCE
Reference Voltage
V REF
AV DD = 4.5V to 5.5V; I REF = 0
1.98
2
2.02
V
Reference Load Regulation
REF Undervoltage Lockout
I REF = 0 to 50μA
V REF rising
Hysteresis
1.93
300
0.01
V
V
mV
FAULT DETECTION
OVP Trip Threshold
(Referred to Nominal V OUT )
UVP Trip Threshold
(Referred to Nominal V OUT )
POK1 Trip Threshold
(Referred to Nominal V OUT )
POK2 Trip Threshold
UVP/OVP = AVDD (Note 4)
Lower level, falling edge, 1% hysteresis
Upper level, rising edge, 1% hysteresis
Lower level, falling edge, 1% hysteresis
112
65
87
107
87.5
116
70
90
110
90
120
75
93
113
92.5
%
%
%
(Referred to Nominal V VTTS
%
and V VTTR )
Upper level, rising edge, 1% hysteresis
107.5
110
112.5
POK2 Disable Threshold
(Measured at REFIN)
V REFIN rising (hysteresis = 75mV typ)
0.7
0.9
V
UVP Blanking Time
From rising edge of SHDN
10
20
40
ms
OVP, UVP, POK_ Propagation
Delay
10
μs
POK_ Output Low Voltage
POK_ Leakage Current
I SINK = 4mA
V POK_ = 5.5V, V FB = 0.8V, V VTTS = 1.3V
0.3
1
V
μA
ILIM Adjustment Range
ILIM Input Leakage Current
V ILIM
0.25
2.00
0.1
V
μA
Current-Limit Threshold (Fixed)
PGND1 to LX
45
50
55
mV
Current-Limit Threshold
(Adjustable) PGND1 to LX
Current-Limit Threshold (Fixed,
Negative Direction) PGND1 to LX
V ILIM = 2V
SKIP = AV DD
170
-75
200
-60
235
-45
mV
mV
Current-Limit Threshold
(Adjustable, Negative Direction)
SKIP = AV DD , V ILIM = 2V
-250
mV
PGND1 to LX
Zero-Crossing Detection
Threshold PGND1 to LX
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
3
+160
15
mV
°C
°C
_______________________________________________________________________________________
3
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MAX8550AETI+ 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel
MAX8550AETI+T 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel
MAX8550AETI-T 功能描述:PMIC 解决方案 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel
MAX8550ETI 功能描述:PMIC 解决方案 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel
MAX8550ETI+ 功能描述:电压模式 PWM 控制器 Integrated DDR Power Supply Solution RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel