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参数资料
| 型号： | MJE13009BV |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/65页 |
| 文件大小： | 517K |
| 代理商： | MJE13009BV |
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3–676
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
The MJE13009 is designed for high–voltage, high–speed power switching inductive
circuits where fall time is critical. They are particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V and 300 V
Reverse Bias SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C
...tc @ 8 A, 100_C is 120 ns (Typ).
700 V Blocking Capability
SOA and Switching Applications Information.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
12
24
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
6
12
Adc
Emitter Current — Continuous
— Peak (1)
IE
IEM
18
36
Adc
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2
16
Watts
mW/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
100
800
Watts
mW/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Thermal Resistance, Junction to Case
R
θJC
1.25
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE13009
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
100 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13009BG | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE1320DW | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BV | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BA | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320AN | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13009D | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009F | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13009G | 功能描述:两极晶体管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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