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参数资料
| 型号： | MJE13009BV |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 23/65页 |
| 文件大小： | 517K |
| 代理商： | MJE13009BV |
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MJE13009
3–678
Motorola Bipolar Power Transistor Device Data
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
10
s
100
s
1ms
dc
100
7
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02
10
20
10
50
0.5
0.1
0.05
30
50
70 100
Figure 1. Forward Bias Safe Operating Area
Figure 2. Reverse Bias Switching Safe
Operating Area
0.2
0.01
300
500
520
14
0
800
2
100
300
TC ≤ 100°C
IB1 = 2.5 A
500
700
VBE(off) = 9 V
0
6
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
10
200
400
600
5 V
2
1
5
TC = 25°C
12
8
4
3 V
1.5 V
I C
,COLLECT
OR
(AMP)
200
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
Figure 3. Forward Bias Power Derating
TC, CASE TEMPERATURE (°C)
0
40
120
160
0.6
POWER
D
ERA
T
ING
FA
CT
OR
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 1 may be found at any case tem-
perature by using the appropriate curve on Figure 3.
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown. Use of reverse biased safe op-
erating area data (Figure 2) is discussed in the applications
information section.
t, TIME (ms)
1
0.01
0.7
0.2
0.1
0.05
0.02
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
1
2
5
10
20
50
100
200
500
Z
θJC(t) = r(t) RθJC
R
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.02
SINGLE PULSE
0.1
0.5
0.2
1.0 k
0.5
0.3
0.07
0.03
0.02
Figure 4. Typical Thermal Response [Z
θJC(t)]
0.01
0.05
0.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13009D | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009F | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13009G | 功能描述:两极晶体管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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