型号: | MJE13009BV |
厂商: | ON SEMICONDUCTOR |
元件分类: | 功率晶体管 |
英文描述: | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
封装: | PLASTIC, TO-220AB, 3 PIN |
文件页数: | 14/65页 |
文件大小: | 517K |
代理商: | MJE13009BV |
相关PDF资料 |
PDF描述 |
---|---|
MJE13009BG | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
MJE1320DW | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
MJE1320BV | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
MJE1320BA | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
MJE1320AN | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
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MJE13009D | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
MJE13009DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
MJE13009F | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
MJE13009G | 功能描述:两极晶体管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |