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参数资料
| 型号： | MJE13009BV |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 12/65页 |
| 文件大小： | 517K |
| 代理商： | MJE13009BV |
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MJE13009
3–677
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
1
5
mAdc
Emitter Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
—
—
1
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 1
Clamped Inductive SOA with Base Reverse Biased
—
See Figure 2
*ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
hFE
8
6
—
40
30
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 12 Adc, IB = 3 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
VCE(sat)
—
—
1
1.5
3
2
Vdc
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 8 Adc, IB = 1.6 Adc)
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
VBE(sat)
—
—
1.2
1.6
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
180
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
td
—
0.06
0.1
s
Rise Time
(VCC = 125 Vdc, IC = 8 A,
IB1 =IB2 =16A t = 25 s
tr
—
0.45
1
s
Storage Time
IB1 = IB2 = 1.6 A, tp = 25 s,
Duty Cycle
v 1%)
ts
—
1.3
3
s
Fall Time
tf
—
0.2
0.7
s
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
(IC = 8 A, Vclamp = 300 Vdc,
tsv
—
0.92
2.3
s
Crossover Time
( Cclam
IB1 = 1.6 A, VBE(off) = 5 Vdc, TC = 100_C)
tc
—
0.12
0.7
s
*Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
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| MJE13009BG | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
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| MJE1320BV | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13009D | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009F | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13009G | 功能描述:两极晶体管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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