参数资料
型号: MJE13009BV
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 12 A, 400 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 28/65页
文件大小: 517K
代理商: MJE13009BV
Outline Dimensions and Leadform Options
5–8
Motorola Bipolar Power Transistor Device Data
TO–220 Leadform Options (continued)
LEADFORM BV
LEADFORM BU
LEADFORM BD
LEADFORM DW
UNDERSIDE
OF LEAD
MOUNTING
SURFACE
.094
± .01 .005 ±.005
.102
± .003
0.005
± 0.005
.223
± .010
.20 REF.
.100 REF.
0.102
± 0.005
0.680
± 0.005
.735
± .010
.610
± .010
.680
±.005
.800
± .050
3 LEADS
相关PDF资料
PDF描述
MJE13009BG 12 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE1320DW 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE1320BV 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE1320BA 2 A, 900 V, NPN, Si, POWER TRANSISTOR
MJE1320AN 2 A, 900 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE13009D 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009DG-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009DL-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
MJE13009F 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR
MJE13009G 功能描述:两极晶体管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2