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| 型号： | MM908E630CVFC |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | MICROCONTROLLER, QCC44 |
| 封装： | 9 X 9 MM, 1 MM HEIGHT, 0.65 MM PITCH, ROHS COMPLIANT, QFN-44 |
| 文件页数： | 5/48页 |
| 文件大小： | 2299K |
| 代理商： | MM908E630CVFC |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
13
908E630
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN Physical Layer(40) (LIN)
Output Current Limitation (LIN2.0: 3.1.4)
Dominant State, VLIN = 18 V
IBUS_LIM
40
120
200
mA
Leakage Output Current to GND
Dominant State; VBUS = 0 V; VBAT = 12 V (LIN2.0: 3.1.5)
Recessive State; 8.0 V
< VBAT < 18 V; 8.0 V < VBUS < 18 V; VBUS ≥
VBAT (LIN2.0: 3.1.6)
GND Disconnected; GNDDEVICE = VSUP; 0 < VBUS < 18 V; VBAT =
12 V (LIN2.0: 3.1.7)
VBAT disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18 V (LIN2.0:
3.1.8)
IBUS_PAS_dom
IBUS_PAS_rec
IBUS_NO_GND
IBUS
-1.0
20
1.0
100
mA
A
mA
A
Receiver Input Voltages
Receiver Dominant State (LIN2.0: 3.1.9)
Receiver Recessive State (LIN2.0: 3.1.10)
Receiver Threshold Center (VBUSDOM - VBUSREC)/2 (LIN2.0: 3.1.11)
Receiver Threshold Hysteresis (VBUSDOM - VBUSREC) (LIN2.0:
3.1.12)
VBUSdom
VBUSrec
VBUS_CNT
VHYS
0.6
0.475
0.5
0.4
0.525
0.175
VSUP
LIN Pull-up Resistor to VSUP (LIN2.0: 3.2.2)
Rslave
20
30
60
k
Ω
Over-temperature Shutdown(41)
TLINSD
150
165
180
°C
Over-temperature Shutdown Hysteresis
TLINSD_HYS
10
°C
Notes
40.
Parameters guaranteed for 7.0 V
≤ VSUP ≤ 18 V. (LIN2.0: 3.1.2)
41.
When over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR register is set.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog die only. Refer to the 68HC908EY16A datasheet for characteristics of the microcontroller
die. Characteristics noted under conditions 5.5 V
≤ VSUP ≤ 18 V, -40°C ≤ TJ ≤ 125°C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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