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参数资料
| 型号： | MM908E630CVFC |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | MICROCONTROLLER, QCC44 |
| 封装： | 9 X 9 MM, 1 MM HEIGHT, 0.65 MM PITCH, ROHS COMPLIANT, QFN-44 |
| 文件页数： | 7/48页 |
| 文件大小： | 2299K |
| 代理商： | MM908E630CVFC |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
15
908E630
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
LIN Physical Layer - Driver Characteristics for Normal Slew Rate - 20.0 kBit/sec(47),(48)
Duty Cycle 1: D1 = tBUS_REC(MIN)/(2 X tBIT)
THREC(MAX) = 0.744 X VSUP; THDOM(MAX) = 0.581 X VSUP
7.0 V
≤ VSUP ≤ 18 V, tBIT = 50 s
D1
0.396
Duty Cycle 2: D2 = tBUS_REC(MAX)/(2 x tBIT)
THREC(MIN) = 0.284 x VSUP; THDOM(MIN) = 0.422 x VSUP
7.6 V
≤ VSUP ≤ 18 V, tBIT = 50 s
D2
0.581
Duty Cycle 3: D3 = tBUS_REC(MIN)/(2 x tBIT)
THREC(MAX) = 0.778 x VSUP; THDOM(MAX) = 0.616 x VSUP
7.0 V
≤ VSUP ≤ 18 V, tBIT = 96 s
D3
0.417
Duty Cycle 4: D4 = tBUS_REC(MAX)/(2 x tBIT)
THREC(MIN) = 0.251 x VSUP; THDOM(MIN) = 0.389 x VSUP
7.6 V
≤ VSUP ≤ 18 V, tBIT = 96 s
D4
0.590
LIN PHYSICAL LAYER - DRIVER CHARACTERISTICS FOR FAST SLEW RATE
LIN Fast Slew Rate (Programming Mode)
SRFAST
20
V/
μs
LIN PHYSICAL LAYER - RECEIVER CHARACTERISTICS AND WAKE-UP TIMINGS(47)
tRX_PD
4.2
6.0
μs
tRX_SYM
-2.0
2.0
μs
Bus Wake-up Deglitcher (Sleep and Stop Modes)(50)
tPROPWL
42
70
95
μs
Bus Wake-up Event Reported
From Sleep Mode(51)
From Stop Mode(52)
tWAKE
9.0
27
1500
35
μs
TxD Permanent Dominant State Delay
tTXDDOM
0.65
1.0
1.35
s
Notes
47.
VSUP from 7.0 V to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TxD
signal to LIN signal threshold defined at each parameter. See Figure 6, page 17.
48.
See Figure 7, page 17.
49.
50.
See Figure 9, page 18 for Sleep and Figure 10, page 18 for Stop mode.
51.
The measurement is done with 1.0 F capacitor and 0 mA current load on VDD. The value takes into account the delay to charge the
capacitor. The delay is measured between the bus wake-up threshold (VBUSWU) rising edge of the LIN bus and when VDD reaches 3.0 V.
52.
In Stop mode, the delay is measured between the bus wake-up threshold (VBUSWU) and the falling edge of the IRQ pin. See Figure 10,
Table 4. Dynamic Electrical Characteristics (continued)
All characteristics are for the analog die only. Refer to the 68HC908EY16A datasheet for characteristics of the microcontroller
die. Characteristics noted under conditions 5.5 V
≤ VSUP ≤ 18 V, -40°C ≤ TJ ≤ 125°C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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