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参数资料
| 型号： | MRF8P20100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/22页 |
| 文件大小： | 1196K |
| 描述： | FET RF N-CH 2025MHZ 28V NI780H-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.03GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 20W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780-4 |
| 供应商设备封装： | NI-780-4 |
| 包装： | 带卷 (TR) |
MRF8P20100HR3 MRF8P20100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz and GSM EDGE base station applications with frequencies from
1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular
base station modulation formats.
?
Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
16.0
44.3
7.8
--33.5
1880 MHz
?
Typical Doherty Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.2
43.5
7.6
--30.8
1900 MHz
16.1
43.4
7.6
--32.6
1920 MHz
15.8
42.9
7.6
--34.6
GSM EDGE
?
Typical GSM EDGE Performance: VDD
=28Volts,IDQA
=IDQB
= 330 mA,
Pout
= 42 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.1
43.8
--58.4
--74.4
3.0
1840 MHz
17.3
42.4
--60.0
--75.5
2.6
1880 MHz
17.1
41.7
--60.5
--75.3
2.4
Features
?
Production Tested in a Symmetrical Doherty Configuration
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Designed for Digital Predistortion Error Correction Systems
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8P20100H
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
1805--2025 MHz, 20 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20100HR3
MRF8P20100HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20100HSR3
(Top View)
GSA
31RFoutA/VDSA
Figure 1. Pin Connections
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20100HR3
?
Freescale Semiconductor, Inc., 2010.
All rights reserved.
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相关代理商/技术参数 |
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| MRF8P20100HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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