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参数资料
| 型号： | MRF8P20100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/22页 |
| 文件大小： | 1196K |
| 描述： | FET RF N-CH 2025MHZ 28V NI780H-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.03GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 20W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780-4 |
| 供应商设备封装： | NI-780-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
EDGE Operation @ TC
=25°C(1)
Derate above 25°C
EDGE
120
0.6
W (PEP)
W (PEP)/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74°C, 20 W CW, 2025 MHz
28 Vdc, IDQA
= 400 mA
28 Vdc, VGSB
=1.3Vdc
Case Temperature 80°C, 42 W CW, 1805 MHz
28 Vdc, IDQA
=IDQB
= 330 mA
RθJC
0.88
0.88
0.59
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(4)
Gate Threshold Voltage
(VDS
=10Vdc,ID
=75μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,IDA
= 400 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
0.1
0.2
0.3
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
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相关代理商/技术参数 |
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| MRF8P20100HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20140WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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