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| 型号： | MRF8P20100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 16/22页 |
| 文件大小： | 1196K |
| 描述： | FET RF N-CH 2025MHZ 28V NI780H-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.03GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 20W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780-4 |
| 供应商设备封装： | NI-780-4 |
| 包装： | 带卷 (TR) |
MRF8P20100HR3 MRF8P20100HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 400 mA, VGSB
=1.3Vdc,Pout
=20WAvg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ
Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
15.0
16.0
18.0
dB
Drain Efficiency
ηD
42.0
44.3
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
7.2
7.8
?
dB
Adjacent Channel Power Ratio
ACPR
?
--33.5
--31.0
dBc
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 400 mA, VGSB
=1.3Vdc,
2010--2025 MHz Bandwidth
Pout
@ 1 dB Compression Point, CW
P1dB
?
78
?
W
Pout
@ 3 dB Compression Point, CW
P3dB
?
126
?
W
IMD Symmetry @ 20 W PEP, Pout
where IMD Third Order
?
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
?
46
?
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
?
53
?
MHz
Gain Flatness in 15 MHz Bandwidth @ Pout
=20WAvg.
GF
?
0.1
?
dB
Gain Variation over Temperature
(--30°Cto+85°C)
?G
?
0.013
?
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
?P1dB
?
0.004
?
dBm/°C
Typical Broadband Performance ? 1880 MHz
(2)
(In Freescale 1880 MHz Doherty Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
=
400 mA, VGSB
=1.3Vdc,Pout
= 20 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.2
43.5
7.6
--30.8
1900 MHz
16.1
43.4
7.6
--32.6
1920 MHz
15.8
42.9
7.6
--34.6
Typical GSM EDGE Performance
(3)
(In Freescale Class AB Test Fixture, 50 ohm system) VDD
=28Volts,IDQA
=IDQB
= 330 mA,
Pout
= 42 Watts Avg., 1805--1880 MHz EDGE Modulation
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.1
43.8
--58.4
--74.4
3.0
1840 MHz
17.3
42.4
--60.0
--75.5
2.6
1880 MHz
17.1
41.7
--60.5
--75.3
2.4
1. Part internally matched both on input and output.
2. Measurement made with device in a Symmetrical Doherty configuration.
3. Measurement made with device in
quadrature combined configuration.
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| MRF8P20100HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P20100HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 100W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF8P20140WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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