- 您现在的位置：买卖IC网 > PDF目录385639 > MT28F200B3 (Micron Technology, Inc.) FLASH MEMORY PDF资料下载
参数资料
| 型号： | MT28F200B3 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 闪存 |
| 文件页数： | 13/31页 |
| 文件大小： | 558K |
| 代理商： | MT28F200B3 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页
13
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
a null WRITE. To execute a null WRITE, FFH must be
written when BYTE# is LOW, or FFFFH must be written
when BYTE# is HIGH. Once the ISM status bit (SR7) has
been set, the device will be in the status register read
mode until another command is issued.
ERASE SEQUENCE
Executing an ERASE sequence will set all bits within
a block to logic 1. The command sequence necessary to
execute an ERASE is similar to that of a WRITE. To
provide added security against accidental block era-
sure, two consecutive command cycles are required to
initiate an ERASE of a block. In the first cycle, addresses
are “Don’t Care,” and ERASE SETUP (20H) is given. In
the second cycle, V
PP
must be brought to V
PPH
, an
address within the block to be erased must be issued,
and ERASE CONFIRM (D0H) must be given. If a com-
mand other than ERASE CONFIRM is given, the write
and erase status bits (SR4 and SR5) will be set, and the
device will be in the status register read mode.
After the ERASE CONFIRM (D0H) is issued, the ISM
will start the ERASE of the addressed block. Any READ
operation will output the status register contents on
DQ0-DQ7. V
PP
must be held at V
PPH
until the ERASE is
completed (SR7 = 1). Once the ERASE is completed, the
device will be in the status register read mode until
another command is issued. Erasing the boot block also
requires that either the RP# pin be set to V
HH
or the WP#
pin be held HIGH at the same time V
PP
is set to V
PPH
.
ERASE SUSPENSION
The only command that may be issued while an
ERASE is in progress is ERASE SUSPEND. This command
allows other commands to be executed while pausing
the ERASE in progress. Once the device has reached the
erase suspend mode, the erase suspend status bit (SR6)
and ISM status bit (SR7) will be set. The device may now
be given a READ ARRAY, ERASE RESUME or READ
STATUS REGISTER command. After READ ARRAY has
been issued, any location not within the block being
erased may be read. If ERASE RESUME is issued before
SR6 has been set, the device will immediately proceed
with the ERASE in progress.
ERROR HANDLING
After the ISM status bit (SR7) has been set, the V
PP
(SR3),
write (SR4) and erase (SR5) status bits may be checked. If
one or a combination of these three bits has been set, an error
has occurred. The ISM cannot reset these three bits. To
clear these bits, CLEAR STATUS REGISTER (50H) must be
given. If the V
PP
status bit (SR3) is set, further WRITE or
ERASE operations cannot resume until the status register is
cleared. Table 4 lists the combination of errors.
Table 4
Status Register Error Decode
1
STATUS BITS
SR4
0
0
1
1
0
0
1
1
SR5
0
0
0
0
1
1
1
1
SR3
0
1
0
1
0
1
0
1
ERROR DESCRIPTION
No errors
V
PP
voltage error
WRITE error
WRITE error, V
PP
voltage not valid at time of WRITE
ERASE error
ERASE error, V
PP
voltage not valid at time of ERASE CONFIRM
Command sequencing error or WRITE/ERASE error
Command sequencing error, V
PP
voltage error, with WRITE and ERASE errors
NOTE:
1. SR3-SR5 must be cleared using CLEAR STATUS REGISTER.
相关PDF资料 |
PDF描述 |
|---|---|
| MT28F200B5 | FLASH MEMORY |
| MT28F320A18 | FLASH MEMORY |
| MT2D18 | 1 Meg x 8 DRAM Module(5V，1M x 8 动态RAM模块) |
| MT46V16M4 | 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM) |
| MT46V4M16 | 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组，双数据速率同步动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28F200B5 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F200B5SG-6 B | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray |
| MT28F200B5SG-6 T | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray |
| MT28F200B5SG-8 B TR | 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 80ns 44-Pin SOP T/R |
| MT28F320A18 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
发布紧急采购，3分钟左右您将得到回复。