参数资料
型号: MT28F200B3
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 16/31页
文件大小: 558K
代理商: MT28F200B3
16
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
NO
Start (ERASE completed)
YES
SR4, 5 = 1
SR3 = 0
YES
YES
Command Sequence Error
SR5 = 0
NO
NO
6
V Error
PP
BLOCK ERASE Error
5, 6
6
ERASE Successful
YES
NO
V
PP
= 3.3V or 5V
Complete Status
Check (optional)
ERASE Complete
NO
YES
Suspend ERASE
STATUS REGISTER
READ
SR7 = 1
WRITE 20H
Start
WRITE D0H,
Block Address
Suspend
Sequence
ERASE Resumed
E
B
3
4
2
SELF-TIMED BLOCK ERASE SEQUENCE
1
COMPLETE BLOCK ERASE
STATUS-CHECK SEQUENCE
NOTE:
1. Sequence may be repeated to erase additional blocks.
2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register is
cleared.
3. To return to the array read mode, the FFH command must be issued.
4. Refer to the ERASE SUSPEND flowchart for more information.
5. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
or ERASE operations are allowed by the CEL.
6. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
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