参数资料
型号: MT28F200B3
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 28/31页
文件大小: 558K
代理商: MT28F200B3
28
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
DON’T CARE
tWC
tWED1/2/3/4
tRS
A
IN
Status
(SR7=1)
tRHH
tWH
tWS
[Unlock boot block]
tVPS2
tRHS
tVPH
tAS
tAH
tCP
tCPH
tDS
tDH
CMD
in
CMD/
Data-in
CMD
in
WRITE SETUP or
ERASE SETUP input
WRITE or ERASE (block)
address asserted, and
WRITE data or ERASE
CONFIRM issued
WRITE or ERASE
executed, status register
checked for completion
Command for next
operation issued
tDH
tDS
[5V V
PP
]
[Unlock boot block]
tVPS1
Note 1
tAS
tAH
Status
(SR7=0)
tWB
WE#
A0-A16/(A17)
OE#
DQ0-DQ7/
DQ0-DQ15
2
CE#
RP#
3
V
IH
V
IL
V
PP
V
IH
V
IL
V
IH
V
HH
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
WP#
3
V
IL
V
IL
V
PPH1
V
PPLK
V
PPH2
[3.3V V
PP
]
WRITE/ERASE CYCLE
CE#-CONTROLLED WRITE/ERASE
t
VPS2
t
RS
t
RHS
t
WED1
t
WED2
t
WED3
t
WED4
t
WB
t
VPH
t
RHH
100
1,000
200
6
300
300
600
200
0
0
100
1,000
200
6
300
300
600
200
0
0
ns
ns
ns
μ
s
ms
ms
ms
ns
ns
ns
TIMING PARAMETERS
Commercial Temperature (0
°
C
T
A
+70
°
C)
Extended Temperature (-40
°
C
T
A
+85
°
C)
-9
-10 ET
MIN
100
30
70
80
10
70
0
0
0
200
SYMBOL
t
WC
t
CPH
t
CP
t
AS
t
AH
t
DS
t
DH
t
WS
t
WH
t
VPS1
MIN
90
20
70
70
10
70
0
0
0
200
MAX
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-9
-10 ET
MIN
SYMBOL
MIN
MAX
MAX
UNITS
NOTE:
1. Address inputs are “Don’t Care” but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F200B3
only).
3. Either RP# at V
HH
or WP# HIGH unlocks the boot block.
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