参数资料
型号: MT28F200B3
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 20/31页
文件大小: 558K
代理商: MT28F200B3
20
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
Commercial Temperature (0
°
C
T
A
+70
°
C) and Extended Temperature (-40
°
C
T
A
+85
°
C); V
CC
= +3.3V
±
0.3V
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
-9
-10 ET
SYMBOL
t
RC
t
ACE
t
AOE
t
AA
t
RWH
t
OD
t
OH
t
RP
MIN
90
MAX
MIN
100
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
1
1, 2
1, 2
1
1
1
1
1
90
45
90
100
50
100
1,000
45
1,000
25
0
0
150
150
NOTE:
1. Measurements tested under AC Test Conditions.
2. OE# may be delayed by
t
ACE minus
t
AOE after CE# falls before
t
ACE is affected.
AC TEST CONDITIONS
Input pulse levels ..................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level........................................... 1.5V
Output timing reference level ....................................... 1.5V
Output load ................................... 1 TTL gate and C
L
= 50pF
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