参数资料
型号: MT28F200B3
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 25/31页
文件大小: 558K
代理商: MT28F200B3
25
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS: WE#-CONTROLLED WRITES
Commercial Temperature (0
°
C
T
A
+70
°
C) and Extended Temperature (-40
°
C
T
A
+85
°
C); V
CC
= +3.3V
±
0.3V
AC CHARACTERISTICS
PARAMETER
Address hold time from WE# HIGH
Data hold time from WE# HIGH
CE# setup time to WE# LOW
CE# hold time from WE# HIGH
V
PP
setup time to WE# HIGH
V
PP
setup time to WE# HIGH
RP# HIGH to WE# LOW delay
RP# at V
HH
or WP# HIGH setup time to WE# HIGH
WRITE duration (WORD or BYTE WRITE)
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
WE# HIGH to busy status (SR7 = 0)
V
PP
hold time from status data valid
RP# at V
HH
or WP# HIGH hold time from status data valid
Boot block relock delay time
-9/-10 ET
SYMBOL
t
AH
t
DH
t
CS
t
CH
t
VPS1
t
VPS2
t
RS
t
RHS
t
WED1
t
WED2
t
WED3
t
WED4
t
WB
t
VPH
t
RHH
t
REL
MIN
10
0
0
0
200
100
1,000
200
6
300
300
600
200
0
0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
ms
ms
ms
ns
ns
ns
ns
NOTES
1
2
3
4
3, 4
4
4
5
4
3
6
200
NOTE:
1. Measured with V
PP
= V
PPH
1
= 3.3V.
2. Measured with V
PP
= V
PPH
2
= 5V.
3. RP# should be held at V
HH
or WP# held HIGH until boot block WRITE or ERASE is complete.
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before
t
WB is met may falsely indicate WRITE or ERASE completion.
6.
t
REL is required to relock boot block after WRITE or ERASE to boot block.
相关PDF资料
PDF描述
MT28F200B5 FLASH MEMORY
MT28F320A18 FLASH MEMORY
MT2D18 1 Meg x 8 DRAM Module(5V,1M x 8 动态RAM模块)
MT46V16M4 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组,双数据速率同步动态RAM)
MT46V4M16 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组,双数据速率同步动态RAM)
相关代理商/技术参数
参数描述
MT28F200B5 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY
MT28F200B5SG-6 B 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-6 T 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray
MT28F200B5SG-8 B TR 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 80ns 44-Pin SOP T/R
MT28F320A18 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY