参数资料
型号: MT46H128M32LFCM-5AT:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA90
封装: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 28/106页
文件大小: 3431K
Table 6: Capacitance (x16, x32)
Note 1 applies to all the parameters in this table
Parameter
Symbol
Min
Max
Unit
Notes
Input capacitance: CK, CK#
CCK
1.5
3.5
pF
Delta input capacitance: CK, CK#
CDCK
0.25
pF
Input capacitance: command and address
CI
1.5
3.5
pF
Delta input capacitance: command and address
CDI
0.5
pF
Input/output capacitance: DQ, DQS, DM
CIO
2.0
4.5
pF
Delta input/output capacitance: DQ, DQS, DM
CDIO
0.5
pF
Notes: 1. This parameter is sampled. VDD/VDDQ = 1.70–1.95V, f = 100 MHz, TA = 25C, VOUT(DC) =
VDDQ/2, VOUT (peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the
fact that they are matched in loading.
2. The input capacitance per pin group will not differ by more than this maximum amount
for any given device.
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-
mum amount for any given device.
2Gb: x16, x32 Mobile LPDDR SDRAM
Electrical Specifications
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
28
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数
参数描述
MT46H16M16 制造商:MICRON 制造商全称:Micron Technology 功能描述:Mobile Double Data Rate (DDR) SDRAM
MT46H16M16LF 制造商:MICRON 制造商全称:Micron Technology 功能描述:Mobile Double Data Rate (DDR) SDRAM