- 您现在的位置：买卖IC网 > PDF目录296642 > MT46H128M32LFCM-5AT:A 128M X 32 DDR DRAM, 5 ns, PBGA90 PDF资料下载
参数资料
| 型号： | MT46H128M32LFCM-5AT:A |
| 元件分类： | DRAM |
| 英文描述： | 128M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 10 X 13 MM, GREEN, PLASTIC, VFBGA-90 |
| 文件页数： | 51/106页 |
| 文件大小： | 3431K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页当前第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页
Figure 21: PRECHARGE Command
CS#
WE#
CAS#
RAS#
CKE
A10
BA0, BA1
HIGH
All banks
Single bank
Bank
CK
CK#
Don’t Care
Address
Note: 1. If A10 is HIGH, bank address becomes “Don’t Care.”
BURST TERMINATE
The BURST TERMINATE command is used to truncate READ bursts with auto pre-
charge disabled. The most recently registered READ command prior to the BURST
TERMINATE command will be truncated, as described in READ Operation (page 69).
The open page from which the READ was terminated remains open.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the device and is analogous to CAS#-
BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is
nonpersistent and must be issued each time a refresh is required.
Addressing is generated by the internal refresh controller. This makes the address bits a
“Don’t Care” during an AUTO REFRESH command.
For improved efficiency in scheduling and switching between tasks, some flexibility in
the absolute refresh interval is provided. The auto refresh period begins when the AU-
TO REFRESH command is registered and ends tRFC later.
2Gb: x16, x32 Mobile LPDDR SDRAM
Commands
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
49
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MT46H128M32LFCM-5IT:A | 128M X 32 DDR DRAM, 5 ns, PBGA90 |
| MT46V128M4FN-75E:C | 128M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| MT46V128M4P-75L:C | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V128M4P-75ZLIT:C | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V64M4TG-75E | 64M X 4 DDR DRAM, 0.75 ns, PDSO66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46H16M16 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Mobile Double Data Rate (DDR) SDRAM |
| MT46H16M16LF | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Mobile Double Data Rate (DDR) SDRAM |
发布紧急采购，3分钟左右您将得到回复。