参数资料
型号: MT46V2M32V1
厂商: Micron Technology, Inc.
英文描述: DOUBLE DATA RATE DDR SDRAM
中文描述: 双倍数据速率的DDR SDRAM内存
文件页数: 39/65页
文件大小: 2360K
代理商: MT46V2M32V1
39
64Mb: x32 DDR SDRAM
2M32DDR-07.p65
Rev. 12/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32
DDR SDRAM
TRUTH TABLE 4 – CURRENT STATE BANK
n
– COMMAND TO BANK
m
(Notes: 1-9; notes appear below and on next page)
CURRENT STATE CS# RAS# CAS# WE#
Any
H
L
Idle
X
Row
L
Activating,
L
Active, or
L
Precharging
L
Read
L
(Auto-
L
Precharge
L
Disabled)
L
Write
L
(Auto-
L
Precharge
L
Disabled)
L
Read
L
(With Auto-
L
Precharge)
L
L
Write
L
(With Auto-
L
Precharge)
L
L
COMMAND/ACTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
NOTES
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
7
7
7
7, 9
7, 8
7
7, 3a
7, 9, 3a
7, 3a
7, 3a
NOTE:
1. This table applies when CKE
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been met (if the
previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and the
commands shown are those allowed to be issued to bank
m,
assuming that bank
m
is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data bursts/accesses
and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Read with Auto
Precharge Enabled: See following text - 3a
Write with Auto
Precharge Enabled: See following text - 3a
相关PDF资料
PDF描述
MT46V32M4-1 DOUBLE DATA RATE DDR SDRAM
MT46V32M4TG-75 DOUBLE DATA RATE DDR SDRAM
MT46V32M4TG-75L DOUBLE DATA RATE DDR SDRAM
MT46V32M4TG-75Z DOUBLE DATA RATE DDR SDRAM
MT46V32M4TG-75ZL DOUBLE DATA RATE DDR SDRAM
相关代理商/技术参数
参数描述
MT46V32M16 制造商:Micron Technology Inc 功能描述:32MX16 DDR SDRAM PLASTIC IND TEMP BGA 2.6V DDR - Trays
MT46V32M16-5B 制造商:Micron Technology Inc 功能描述: